triquint semiconductor texas : phone (972)994-8465 fax (972)994 8504 web: www.triquint.com advance product information january 19, 2001 1 ka band low noise amplifier TGA1319A key features and performance 0.15um phemt technology 21-27 ghz frequency range 2 db nominal noise figure 19 db nominal gain 12 dbm pout 3v, 45 ma note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications subject to change without notice primary applications point-to-point radio point-to-multipoint communications typical nf @ 25c typical gain @ 25c chip dimensions 1.984 mm x .923 mm 10 12 14 16 18 20 22 24 26 28 30 15 16 17 18 19 20 21 22 23 24 25 26 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 15 16 17 18 19 20 21 22 23 24 25 26 27 -20 -15 -10 -5 0 15 16 17 18 19 20 21 22 23 24 25 26 -20 -16 -12 -8 -4 0 15 16 17 18 19 20 21 22 23 24 25 26 typical s22 @ 25c typical s11 @ 25c preliminary data, 2 fixtured samples @ 25c
triquint semiconductor texas : phone (972)994-8465 fax (972)994 8504 web: www.triquint.com advance product information january 19, 2001 dc probe tests (t a = 25 c 5 c) symbol parameter minimum maximum value idss saturated drain current --- --- ma v p pinch-off voltage -1.5 -0.5 v bvgs breakdown voltage gate-source --- --- v bvgd breakdown voltage gate-drain --- --- v on-wafer rf probe characteristics (t a = 25 c 5 c) v d = 3 v, i d1 = 15 ma, i d2 = 30 ma limit symbol parameter test condition min typ max units gain small signal gain f = 21 ? 27 ghz 18 --- db nf noise figure f = 21 ? 26.5 ghz --- 2 db pwr output power @ p1db f = 21 ? 27 ghz 10 --- dbm maximum ratings symbol parameter 4/ value notes v + positive supply voltage 5 v i + positive supply current 60 ma 1/ i - negative gate current 5.28 ma p in input continuous wave power 15 dbm p d power dissipation .3 w t ch operating channel temperature 150 0 c2/ 3 / t m mounting temperature (30 seconds) 320 0 c t stg storage temperature -65 to 150 0 c 1/ total current for all stages. 2/ these ratings apply to each individual fet. 3/ junction operating temperature will directly affect the device median time to failure (t m ). for maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. 4/ these ratings represent the maximum operable values for the device. note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications subject to change without notice 2
triquint semiconductor texas : phone (972)994-8465 fax (972)994 8504 web: www.triquint.com advance product information january 19, 2001 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications subject to change without notice TGA1319A - recommended assembly drawing TGA1319A 100 pf 100 pf 100 pf 100 pf vd=3v vg1 vg2 rfin rfout 3 note: vg1 and vg2 may be sourced from the same supply.
triquint semiconductor texas : phone (972)994-8465 fax (972)994 8504 web: www.triquint.com advance product information january 19, 2001 mechanical drawing p note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications subject to change without notice 4
triquint semiconductor texas : phone (972)994-8465 fax (972)994 8504 web: www.triquint.com advance product information january 19, 2001 reflow process assembly notes: ? = ausn (80/20) solder with limited exposure to temperatures at or above 300 c ? = alloy station or conveyor furnace with reducing atmosphere ? = no fluxes should be utilized ? = coefficient of thermal expansion matching is critical for long-term reliability ? = storage in dry nitrogen atmosphere component placement and adhesive attachment assembly notes: ? = vacuum pencils and/or vacuum collets preferred method of pick up ? = avoidance of air bridges during placement ? = force impact critical during auto placement ? = organic attachment can be used in low-power applications ? = curing should be done in a convection oven; proper exhaust is a safety concern ? = microwave or radiant curing should not be used because of differential heating ? = coefficient of thermal expansion matching is critical interconnect process assembly notes: ? = thermosonic ball bonding is the preferred interconnect technique ? = force, time, and ultrasonics are critical parameters ? = aluminum wire should not be used ? = discrete fet devices with small pad sizes should be bonded with 0.0007-inch wire ? = maximum stage temperature: 200 c assembly process notes gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. TGA1319A 5
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